Planar double-gate transistor
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Planar double-gate transistor from technology to circuit

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Published by Springer in [Dordrecht?] .
Written in English


  • Metal oxide semiconductor field-effect transistors,
  • Metal oxide semiconductors, Complementary,
  • Planar transistors

Book details:

Edition Notes

Includes bibliographical references and index.

StatementAmara Amara, Olivier Rozeau, editors.
ContributionsAmara, Amara., Rozeau, Olivier.
LC ClassificationsTK7871.95 .P54 2009
The Physical Object
Paginationviii, 211 p. :
Number of Pages211
ID Numbers
Open LibraryOL24073203M
ISBN 109781402093272, 9781402093418
LC Control Number2008939918

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Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub nm technological nodes as planned by the current ITRS Roadmap. The book topics are mainly focusing on:Format: Hardcover. Get this from a library! Planar double-gate transistor: from technology to circuit. [Amara Amara; Olivier Rozeau;] -- This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS subnm devices and the design of elementary circuits. The goal is. FinFET (fin field-effect transistor) is a type of non-planar transistor, or "3D" transistor (not to be confused with 3D microchips). The FinFET is a variation on traditional MOSFETs distinguished by the presence of a thin silicon "fin" inversion channel on top of the substrate, allowing the gate to make two points of contact: the left and right sides of the fin. A new planar split dual gate (PSDG) MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time.

COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle . FIG. 1. (a) Schematics and (b) scanning electron micrograph of a planar double gate quantum wire transistor that has a wire gate placed inside the gap of a split gate. The wire gate is 30 nm wide. The split gate has a length of pm and a gap width of pm. Appl. Phys. Lett. Double-Gate FET Scale length: Structure: Ground-Plane FET Source Drain Energy Band Profile: (OFF State) longer R.‐H. Yan et al., IEEE Trans. Electron Devices, Vol. 39, pp. ‐, • t Si is a critical design parameter! tunneling. Then Vertical tunnel field effect transistor is demonstrated by Bhuwalka and shows its utility as a Nano scale alternative device. Double gate tunnel Field effect transistor (DGTFET) is considered to increase the tunneling current as two tunneling junctions are formed. Low sub threshold swing and high 𝐼Author: Ravish Gupta, Ravi Mohan, Divyanshu Rao.

A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices have been given the generic name "finfets" because the source/drain region forms fins on the silicon . The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to . Double Gate SOI-MOSFETs are attractive candidates for meeting the requirements of the devices miniaturization. The silicon film thickness, t si being an extra scaling parameter in these devices, offers an additional degree of freedom for threshold voltage adjustment, through the back-gate voltage V bg [1] thereby controlling the short channel effect (SCE) by: CMOS Technology Scaling • Gate length has not scaled proportionately with device pitch (x per generation) in recent generations. – Transistor performance has been boosted by other means. 90 nm node 65 nm node 45 nm node 32 nm node T. Ghani et al., IEDM K. Mistryet al., IEDM P. Packan et al., IEDM XTEM images with the same scale.